Picture of Open Access badges

Discover Open Access research at Strathprints

It's International Open Access Week, 24-30 October 2016. This year's theme is "Open in Action" and is all about taking meaningful steps towards opening up research and scholarship. The Strathprints institutional repository is a digital archive of University of Strathclyde research outputs. Explore recent world leading Open Access research content by University of Strathclyde researchers and see how Strathclyde researchers are committing to putting "Open in Action".


Image: h_pampel, CC-BY

Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. and Sellers, I.R. and Semond, F. (2005) Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities. Physica Status Solidi A: Applications and Materials Science, 202 (14). pp. 2648-2652.

Full text not available in this repository. (Request a copy from the Strathclyde author)


AlInN alloys achieve an in-plane lattice match to hexagonal GaN at an indium nitride mole fraction of 18%. Meanwhile Al0.82In0.18N displays a refractive index contrast of 7% with GaN at visible wavelengths. We illustrate the use of Al0.82In0.18N insertion layers to control layer thicknesses during homoepitaxial growth of GaN-based microcavities, using in situ optical reflectometry. The structures discussed are 3 /2 microcavities incorporating distributed InGaN quantum wells tailored for emission at 400 nm. As-grown samples have been characterised by techniques including cathodoluminescence spectroscopy. In addition to their role in growth monitoring, there are several post-growth processing steps in which Al0.82In0.18N insertion layers can assist microcavity fabrication. We focus here on a demonstration of the 1:5 etch rate selectivity obtainable between Al0.82In0.18</SUB >N and GaN in reactive ion etching